28V high-linearity and rugged InGaP/GaAs power HBT

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2006, Pages 881-884

  Wang, Nanlei Larry ^a   Ma, Wenlong ^a   Xu, Sarah ^a   Camargo, Edmar ^a   Sun, Xiaopeng ^a   Hu, Peter ^a   Tang, Zhuang ^a   Chau, Hin Fai Frank ^a   Chen, Amelia ^a   Lee, C P ^b  

^a WJ Communications Inc   (United States)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Heterojunction bipolar transistor; Interchannel interference; Power amplifiers; Power bipolar amplifiers

Indexed keywords

DYNAMIC BIAS CIRCUITS; INTERCHANNEL INTERFERENCE; LINEAR POWER OPERATION; POWER BIPOLAR AMPLIFIERS; WCDMA MODULATION;

AMPLIFICATION; CODE DIVISION MULTIPLE ACCESS; GAIN MEASUREMENT; GALLIUM; PHASE MODULATION; POWER AMPLIFIERS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 34250336862     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2006.249833     Document Type: Conference Paper

References (6)

1. N. L. Wang, C. Dunnrowicz, X. Chen, H. F. Chau, X. Sun, Y. Chen, B. Lin, I. L. Lo, C. H. Huang and M.H. T. Yang - "High Efficiency 28V Class AB InGaP/GaAs HBT MMIC Amplifier with Integrated Bias Circuit", 2003 IEEE MTT-S Int. Microwave Symposium Digest, vol 3, pp, June 2003 pp. 2397-2402.
2. N. L. Wang, C. Dunnrowicz, W. Ma. X. Chen, H. F. Chau, X. Sun, Y. Chen, B. Lin, I. L. Lo, C. H. Huang and M.H. T. Yang - "Linearity Improvement of Multi-Watts 24-28V InGaP/GaAs HBT by Low Frequency Low Source Impedance Matching". 2004 IEEE MTT-S Int. Microwave Symp. Dig., vol. 3, pp. 1721-1724, June 2004.
3. N.L.Wang, W. Ma, C. Dunnrowicz, X. Chen, H.F. Chau, X. Sun, Y.Chen, B.Liin, I.L. Lo, C.H. Huang, M.H.T. Yang, C.P.Lee, "28V High Efficiency High Linearity InGaP/GaAs Power HBT", 2003 PA Workshop 6-2, UCSD.
4. J.H.K. Vuolevi, T. Rahkonen, J.P.A. Manninen, "Measurement Technique for Characterizing Memory Effects in RF Power Amplifier," IEEE Trans. MTT, Vol. 49, No. 8, pp. 1383-1389, August 2001.
5. M. Rickelt, H-M Rein, E. Rose, "Influence of Impactlonization- Induced Instabilities on the Maximum Usable Output Voltage of Si-Bipolar Transistors," IEEE Trans. ED. Vol. 48. No. 4, pp. 774-779, April 2001.
6. J. C. Pedro and N. B. Carvalho, "Intermodulation distortion in microwave and wireless circuits". Artech House 2003