High efficiency and high linearity InGaP/GaAs HBT power amplifiers: Matching techniques of source and load impedance to improve phase distortion and linearity

IEEE Transactions on Electron Devices

Volumn 45, Issue 6, 1998, Pages 1196-1200

  Iwai, Taisuke ^a   Ohara, Shiro ^a   Yamada, Hiroshi ^a   Yamaguchi, Yasuhiro ^a   Imanishi, Kenji ^a   Joshin, Kazukiyo ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Adjacent channel leakage power; Linearity; Phase distortion; Power added efficiency; Power amplifiers

Indexed keywords

ELECTRIC DISTORTION; IMPEDANCE MATCHING (ELECTRIC); PHASE SHIFT KEYING; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

ADJACENT CHANNEL LEAKAGE POWER (ACP); POWER ADDED EFFICIENCY (PAE); QUADRATURE PHASE SHIFT KEYING (QPSK);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032096838     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.678510     Document Type: Article

References (9)

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