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Volumn 43, Issue 2, 1996, Pages 245-251

The use of base ballasting to prevent the collapse of current gain in algaas/gaas heteroj unction bipolar transistors

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; NUMERICAL METHODS; REGRESSION ANALYSIS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; THERMODYNAMIC STABILITY; VOLTAGE MEASUREMENT;

EID: 0030080708     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.481724     Document Type: Article
Times cited : (89)

References (18)
  • 1
    • 0027697678 scopus 로고
    • Current gain collapse in microwave multi-finger heterojunction bipolar transistors operated at very high power density
    • W. Liu, S. Nelson, D. Hill, and A. Khatibzadeh, Current gain collapse in microwave multi-finger heterojunction bipolar transistors operated at very high power density," IEEE Trans. Electron Devices, vol. 40. pp. 1917-1927, 1993.
    • (1993) IEEE Trans. Electron Devices , vol.40 , pp. 1917-1927
    • Liu, W.1    Nelson, S.2    Hill, D.3    Khatibzadeh, A.4
  • 2
    • 0028518166 scopus 로고
    • The collapse of current gain in multi-finger heterojunction bipolar transistor: Its substrate temepraiure dependence, instability criteria, and modeling
    • W. Liu and A. Khatibzadeh, "The collapse of current gain in multi-finger heterojunction bipolar transistor: Its substrate temepraiure dependence, instability criteria, and modeling," IEEE Trans. Electron Devices, pp. 1698-1707, 1994.
    • (1994) IEEE Trans. Electron Devices , pp. 1698-1707
    • Liu, W.1    Khatibzadeh, A.2
  • 3
    • 0016081261 scopus 로고
    • A quantitative study of emitter ballasting
    • R. P. Arnold and D. S. Zoroglu, "A quantitative study of emitter ballasting," IEEE Trans. Electron Devices, vol. 21, pp. 385-391, 1974.
    • (1974) IEEE Trans. Electron Devices , vol.21 , pp. 385-391
    • Arnold, R.P.1    Zoroglu, D.S.2
  • 4
    • 0026108045 scopus 로고
    • Emitter ballasting resistor design for, and current handling capability of AlGaAs/GaAs power heterojunction bipolar transistors
    • G. B. Gao, M. S. Unlu, H. Morkoc, and D. L. Blackburn, "Emitter ballasting resistor design for, and current handling capability of AlGaAs/GaAs power heterojunction bipolar transistors," IEEE Trans. Electron Devices, vol. 38, pp. 185-196, 1991.
    • (1991) IEEE Trans. Electron Devices , vol.38 , pp. 185-196
    • Gao, G.B.1    Unlu, M.S.2    Morkoc, H.3    Blackburn, D.L.4
  • 6
    • 84911966221 scopus 로고
    • Comparison of one- And two-dimensional models of transistor thermal instability
    • vol. ED-
    • P. L. Hower and P. K. Govil, "Comparison of one- and two-dimensional models of transistor thermal instability," IEEE Trans. Electron Devices, vol. ED-21, pp. 617-623, 1974.
    • (1974) IEEE Trans. Electron Devices , vol.21 , pp. 617-623
    • Hower, P.L.1    Govil, P.K.2
  • 7
    • 0026868349 scopus 로고
    • Determination of junction temperature in AlGaAs/GaAs heterojunction bipolar transistors by electrical measurement
    • J. R. Waldrop, K. C. Wang, and P. M. Asbeck, "Determination of junction temperature in AlGaAs/GaAs heterojunction bipolar transistors by electrical measurement," IEEE Trans. Electron Devices, vol. 39, pp. 1248-1250, 1992.
    • (1992) IEEE Trans. Electron Devices , vol.39 , pp. 1248-1250
    • Waldrop, J.R.1    Wang, K.C.2    Asbeck, P.M.3
  • 8
    • 0027627261 scopus 로고
    • Temperature dependence of current gains in GalnP/GaAs and AlGaAs/GaAs heterojunction bipolar transistors
    • See aslo W. Liu, S. K. Fan, T. Henderson and D. Davito, "Temperature dependence of current gains in GalnP/GaAs and AlGaAs/GaAs heterojunction bipolar transistors," IEEE Trans. Electron Devices, vol. 40, pp. 1351-1353, 1993.
    • (1993) IEEE Trans. Electron Devices , vol.40 , pp. 1351-1353
    • Liu, W.1    Fan, S.K.2    Henderson, T.3    Davito, D.4
  • 11
    • 0003961637 scopus 로고
    • Englewood Cliffs, NJ: Prentice-Hall, 2nd ed.
    • B. G. Streetman, Solid State- Electronics. Englewood Cliffs, NJ: Prentice-Hall, 2nd ed., 1980, p. 271.
    • (1980) Solid State- Electronics , pp. 271
    • Streetman, B.G.1
  • 12
    • 85068341129 scopus 로고
    • Thermal instabilities and hot spots in junction transistors
    • M. F. Goldberg and J. Vaccaro, Eds. Baltimore: Spartan
    • R. M. Scarlett, W. Shockley and R. H. Haitz, "Thermal instabilities and hot spots in junction transistors," in Physics of Failure in Electronics, M. F. Goldberg and J. Vaccaro, Eds. Baltimore: Spartan, 1963, pp. 194-203.
    • (1963) Physics of Failure in Electronics , pp. 194-203
    • Scarlett, R.M.1    Shockley, W.2    Haitz, R.H.3
  • 13
    • 0001974214 scopus 로고
    • Voltage feedback and thermal resistance in junction transistors
    • J. J. Sparkes, "Voltage feedback and thermal resistance in junction transistors," IRE Proc., 1958, vol. 46, pp. 1305-1306.
    • (1958) IRE Proc. , vol.46 , pp. 1305-1306
    • Sparkes, J.J.1
  • 15
    • 84948606998 scopus 로고
    • Thermal coupling in 2-finger heterojunction bipolar transistors
    • W. Liu, "Thermal coupling in 2-finger heterojunction bipolar transistors," IEEE Trans. Electron Devices, vol. 42, pp. 1033-1038, 1995.
    • (1995) IEEE Trans. Electron Devices , vol.42 , pp. 1033-1038
    • Liu, W.1
  • 16
  • 17
    • 0029250136 scopus 로고
    • Thermal-electric feedback coefficients in GaAs-based heterojunction bipolar transistors
    • W. Liu and A. Yuksel, "Thermal-electric feedback coefficients in GaAs-based heterojunction bipolar transistors," Solid-Slate Electronics, vol. 38, pp. 407-411, 1995.
    • (1995) Solid-Slate Electronics , vol.38 , pp. 407-411
    • Liu, W.1    Yuksel, A.2
  • 18
    • 0000370588 scopus 로고
    • Thermal conductivity of silicon, germanium, III-V compounds and III-V alloys
    • P. D. Maycock, "Thermal conductivity of silicon, germanium, III-V compounds and III-V alloys," Solid-State Electron., vol. 10, pp. 161-168, 1967.
    • (1967) Solid-State Electron. , vol.10 , pp. 161-168
    • Maycock, P.D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.