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Volumn 49, Issue 7, 2001, Pages 1270-1276

The effects of Cbc on the linearity of AlGaAs/GaAs power HBTs

Author keywords

Base collector capacitance; Heterojunction bipolar transistors; Intermodulation distortion; Linearity

Indexed keywords

BASE-COLLECTOR CAPACITANCE; THIRD-ORDER INTERMODULATION (IM3);

EID: 0035394262     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.932247     Document Type: Article
Times cited : (27)

References (20)
  • 1
    • 0027814178 scopus 로고
    • GaAs HBT's for high-speed digital integrated circuit applications
    • Dec.
    • C. T. M. Chang and H.-T. Yuan, "GaAs HBT's for high-speed digital integrated circuit applications," Proc. IEEE, vol. 81, pp. 1727-1743, Dec. 1993.
    • (1993) Proc. IEEE , vol.81 , pp. 1727-1743
    • Chang, C.T.M.1    Yuan, H.-T.2
  • 6
    • 0032096838 scopus 로고    scopus 로고
    • High efficiency and high linearity InGaP/GaAs HBT power amplifiers: Matching techniques of source and load impedance to improve phase distortion and linearity
    • June
    • T. Iwai, S. Ohara, H. Yamada, Y. Yamaguchi, K. Imanishi, and K. Joshin, "High efficiency and high linearity InGaP/GaAs HBT power amplifiers: Matching techniques of source and load impedance to improve phase distortion and linearity," IEEE Trans. Electron Devices, vol. 45, pp. 1196-1200, June 1998.
    • (1998) IEEE Trans. Electron Devices , vol.45 , pp. 1196-1200
    • Iwai, T.1    Ohara, S.2    Yamada, H.3    Yamaguchi, Y.4    Imanishi, K.5    Joshin, K.6
  • 8
    • 0001092463 scopus 로고
    • Mechanisms determining third order intermodulation distortion in AlGaAs/GaAs HBTs
    • Dec.
    • A. Samelis and D. Pavlidis, "Mechanisms determining third order intermodulation distortion in AlGaAs/GaAs HBTs," IEEE Trans. Microwave Theory Tech., vol. 40, pp. 2374-2380, Dec. 1992.
    • (1992) IEEE Trans. Microwave Theory Tech. , vol.40 , pp. 2374-2380
    • Samelis, A.1    Pavlidis, D.2
  • 10
    • 0031375058 scopus 로고    scopus 로고
    • Intermodulation mechanism and linearization of AlGaAs/GaAs HBT's
    • Dec.
    • J. Lee, W. Kim, T. Rho, and B. Kim, "Intermodulation mechanism and linearization of AlGaAs/GaAs HBT's," IEEE Trans. Microwave Theory Tech., vol. 45, pp. 2065-2072, Dec. 1997.
    • (1997) IEEE Trans. Microwave Theory Tech. , vol.45 , pp. 2065-2072
    • Lee, J.1    Kim, W.2    Rho, T.3    Kim, B.4
  • 11
    • 0003270535 scopus 로고    scopus 로고
    • HBT linearity and basic linearization approaches
    • presented at the, Baltimore, MD, June
    • P. Asbeck, "HBT linearity and basic linearization approaches," presented at the IEEE MTT-S Int. Microwave Symp.Workshop, Baltimore, MD, June 1998.
    • (1998) IEEE MTT-S Int. Microwave Symp.Workshop
    • Asbeck, P.1
  • 14
    • 0001242402 scopus 로고
    • An investigation of the effect of graded layers and tunneling on the performance of AlGaAs/GaAs HBTs
    • Dec.
    • A. A. Grinberg, M. S. Shur, R. J. Fischer, and H. Morkoc, "An investigation of the effect of graded layers and tunneling on the performance of AlGaAs/GaAs HBTs," IEEE Trans. Electron Devices, vol. ED-31, pp. 1758-1765, Dec. 1984.
    • (1984) IEEE Trans. Electron Devices , vol.ED-31 , pp. 1758-1765
    • Grinberg, A.A.1    Shur, M.S.2    Fischer, R.J.3    Morkoc, H.4
  • 16
    • 0027657452 scopus 로고
    • A physics-based, analytical heterojunction bipolar transistor model including thermal and high-current effects
    • Sept.
    • J. J. Liou, L. L. Liou, C. I. Huang, and B. Bayraktaroglu, "A physics-based, analytical heterojunction bipolar transistor model including thermal and high-current effects," IEEE Trans. Electron Devices, vol. 40, pp. 1570-1577, Sept. 1993.
    • (1993) IEEE Trans. Electron Devices , vol.40 , pp. 1570-1577
    • Liou, J.J.1    Liou, L.L.2    Huang, C.I.3    Bayraktaroglu, B.4
  • 17
    • 84937658108 scopus 로고
    • A theory of transistor cutoff frequency (f ) falloff at high current densities
    • Mar.
    • C. T. Kirk Jr., "A theory of transistor cutoff frequency (f ) falloff at high current densities," IRE Trans. Electron Devices, vol. ED-9, pp. 164-174, Mar. 1962.
    • (1962) IRE Trans. Electron Devices , vol.ED-9 , pp. 164-174
    • Kirk Jr., C.T.1
  • 18
    • 0026836812 scopus 로고
    • Large signal modeling of HBT's including self-heating and transit time effects
    • Mar.
    • P. C. C. Grossman and J. Chroma Jr., "Large signal modeling of HBT's including self-heating and transit time effects," IEEE Trans. Microwave Theory Tech., vol. 40, pp. 449-464, Mar. 1992.
    • (1992) IEEE Trans. Microwave Theory Tech. , vol.40 , pp. 449-464
    • Grossman, P.C.C.1    Chroma Jr., J.2
  • 19
    • 0028483901 scopus 로고
    • A comparative study of the kirk effect in GaAs and Si BJTs
    • J. Lee, B. Kim, Y. Kim, and S. Park, "A comparative study of the kirk effect in GaAs and Si BJTs," Solid State Electron., vol. 37, no. 8, pp. 1485-1490, 1994.
    • (1994) Solid State Electron. , vol.37 , Issue.8 , pp. 1485-1490
    • Lee, J.1    Kim, B.2    Kim, Y.3    Park, S.4
  • 20
    • 0029703299 scopus 로고    scopus 로고
    • Low-frequency dispersion and its influence on the intermodulation performance of AlGaAs/GaAs HBTs
    • San Francisco, CA, June
    • K. Lu, P. M. McIntosh, C. M. Snowden, and R. D. Pollard, "Low-frequency dispersion and its influence on the intermodulation performance of AlGaAs/GaAs HBTs," in IEEE MTT-S Int. Microwave Symp. Dig., San Francisco, CA, June 1996, pp. 1373-1376.
    • (1996) IEEE MTT-S Int. Microwave Symp. Dig. , pp. 1373-1376
    • Lu, K.1    McIntosh, P.M.2    Snowden, C.M.3    Pollard, R.D.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.