Improved HBT linearity with a "post-distortion"-type collector linearizer

IEEE Microwave and Wireless Components Letters

Volumn 13, Issue 3, 2003, Pages 102-104

  Jeon, Yong Joon ^a   Kim, Hyung Wook ^a   Kim, Min Seok ^a   Ahn, Young Sik ^a   Kim, Jong Won ^a   Choi, Ji Youn ^a   Jung, Doo Chan ^a   Shin, Jin Ho ^a  

^a LG Electronics Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; HETEROJUNCTION BIPOLAR TRANSISTORS; LINEARIZATION; MOBILE TELECOMMUNICATION SYSTEMS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; PHASE MEASUREMENT; POWER AMPLIFIERS; QUADRATURE PHASE SHIFT KEYING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR JUNCTIONS; SIGNAL DISTORTION;

COLLECTOR LINEARIZER; COMMON EMITTER; POST DISTORTION; POWER CONSUMPTION;

RADIO FREQUENCY AMPLIFIERS;

EID: 0037900839     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2003.810113     Document Type: Letter

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