A composite-collector InGaP/ GaAs HBT with high ruggedness for GSM power amplifiers

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2003, Pages 711-714

  Niwa, Takaki ^a   Ishigaki, Takashi ^a   Shimawaki, Hidenori ^a   Nashimoto, Yasunobu ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GLOBAL SYSTEM FOR MOBILE COMMUNICATIONS; HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

POWER ADDED EFFICIENCY (PAE);

POWER AMPLIFIERS;

EID: 0042594469     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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2. J. Pusl, S. Sridharan, P. Antognetti, D. Helms, A. Nigam, J. Griffiths, K. Louie and M. Doherty, "SiGe Power Amplifier ICs with SWR Protection for Handset Applications," Microwave Journal, pp.100-113, June 2001.
3. D. Hill and T.S. Kim, "28V thermal-impedance HBT with 20W cw output power," IEEE Trans. Microwave Theory and Tech., vol. 45, pp.2224, 1997
4. S.-L. Fu, T.P.Chin, M.C. Ho, C. W. Tu, and P. M. Asbeck, "Impact ionization coefficients in (100) GaInP," Appl. Phys. Lett., vol. 66, No.25, pp3507-3509, June 1995.
5. T. Niwa, Y. Amamiya, M. Mamada, and H. Shimawaki, "High-ft AlGaAs/ InGaAs HBTs with reduced emitter resistance for low-power-consumption, high-speed ICs," Inst. Phys. Conf., No.162, pp.309-312, October 1998.