High reliability high voltage HBTs operating up to 30 V

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2004, Pages 67-70

  Henderson, Tim ^a   Hitt, John ^a   Campman, Ken ^b  

^a TRIQUINT SEMICONDUCTOR   (United States)

^b Sumika Electronic Materials Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE BREAKDOWN; BASE CURRENT; COLLECTORS; HIGH DISSIPATED POWER;

AVALANCHE DIODES; CHARACTERIZATION; CURRENT DENSITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; EXTRAPOLATION; RELIABILITY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 21644462180     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2004.1392492     Document Type: Conference Paper

References (4)

1. B. Yeats, M. Bonse, P. Chandler, M. Culver, D. D'Avanzo, G. Essilfie, C. Hutchinson, D. Kuhn, T. Low, and T. Shirley, "Reliability of InGaP emitter HBTs at high collector voltage", Proc. GaAs IC Symp., pp. 73-76, 2002.
2. K. Feng, Y. Yang, and C. Nguyen, "Reliability of commercial InGaP/GaAs HBT under high voltage operation", Proc. IEEE GaAs IC Symp., pp. 71-73, 2003.
3. T. Henderson, "Physics of degradation in GaAs-based heterojunction bipolar transistors", Microelectron. Rel. pp. 1033-1042, 1999.
4. K.T. Feng, L. Runshing, P. Canfield, and W. Sun, "Reliability of InGaP/GaAs HBTs under High Current Acceleration", Proc. IEEE GaAs IC Symp., pp. 273-276, 2001.