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Volumn 203, Issue 7, 2006, Pages 1845-1850
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Optimization of AlGaN/GaN HEMTs for high frequency operation
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Author keywords
[No Author keywords available]
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Indexed keywords
GATE RESISTANCE;
GATE TO DRAIN CAPACITANCE;
OUTPUT CONDUCTANCE;
CAPACITANCE;
ELECTRIC RESISTANCE;
ELECTRON GAS;
GAIN CONTROL;
GALLIUM NITRIDE;
GATES (TRANSISTOR);
OPTIMIZATION;
PARAMETER ESTIMATION;
SEMICONDUCTING ALUMINUM COMPOUNDS;
HIGH ELECTRON MOBILITY TRANSISTORS;
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EID: 33745025784
PISSN: 18626300
EISSN: 18626319
Source Type: Journal
DOI: 10.1002/pssa.200565384 Document Type: Article |
Times cited : (37)
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References (2)
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