Optimization of AlGaN/GaN HEMTs for high frequency operation

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 7, 2006, Pages 1845-1850

  Palacios, T ^a,b   Dora, Y ^a   Chakraborty, A ^a   Sanabria, C ^a   Keller, S ^a   DenBaars, S P ^a   Mishra, U K ^a  

^a Santa Barbara   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE RESISTANCE; GATE TO DRAIN CAPACITANCE; OUTPUT CONDUCTANCE;

CAPACITANCE; ELECTRIC RESISTANCE; ELECTRON GAS; GAIN CONTROL; GALLIUM NITRIDE; GATES (TRANSISTOR); OPTIMIZATION; PARAMETER ESTIMATION; SEMICONDUCTING ALUMINUM COMPOUNDS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33745025784     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200565384     Document Type: Article

References (2)

1. S. Heikman, S. Keller, D. S. Green, S. P. DenBaars, and U. K. Mishra, J. Appl. Phys. 94, 5321 (2003).
2. T. Palacios, A. Chakraborty, S. Heikman, S. Keller, S. P. DenBaars, and U. K. Mishra, Electron Device Lett. 27, 13 (2006).