Structural properties of doped GaN on si(111) studied by x-ray diffraction techniques

Journal of Nondestructive Evaluation

Volumn 28, Issue 3-4, 2009, Pages 125-130

  Chuah, L S ^a   Hassan, Z ^a   Ng, S S ^a   Abu Hassan, H ^a  

^a SCHOOL OF PHYSICS   (Malaysia)

Author keywords

Asymmetrical; Doped; GaN; Si(111); Symmetrical; XRD

Indexed keywords

ALN; CRYSTALLINE QUALITY; DIFFRACTION PEAKS; GAN FILM; HIGH-RESOLUTION X-RAY DIFFRACTION; HRXRD; LATTICE PARAMETERS; MATERIAL CHARACTERIZATIONS; MG-DOPED; MONOCRYSTALLINE; NON-DESTRUCTIVE TECHNIQUE; PHASE ANALYSIS; REPRESENTATIVE SAMPLE; ROCKING CURVES; SI (1 1 1); X-RAY DIFFRACTION TECHNIQUES; XRD; XRD PATTERNS;

DIFFRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; SECONDARY BATTERIES; SILICON; X RAY DIFFRACTION;

X RAY DIFFRACTION ANALYSIS;

EID: 73349092719     PISSN: 01959298     EISSN: 15734862     Source Type: Journal    
DOI: 10.1007/s10921-009-0054-8     Document Type: Article

References (22)

1. J.X. Zhang H. Cheng Y.Z. Chen A. Uddin S. Yuan S.J. Geng S. Zhang 2005 Surf. Coat. Technol. 198 68 10.1016/j.surfcoat.2004.10.075 (Pubitemid 40854661)
2. A. Barski U. Rossner J.L. Rouviere M. Arlery 1996 MRS Internet J. Nitride Semicond. Res. 1 21
3. Z. Yang F. Guarin I.W. Tao W.I. Wang S.S. Iyer 1995 J. Vac. Sci. Technol. B 13 789
4. J.W. Yang C.J. Sun Q. Shen M.Z. Anwar M.A. Khan S.A. Nikishin G.A. Seryogin A.V. Osinsky L. Chernyak H. Temkin C. Hu S. Mahajan 1996 Appl. Phys. Lett. 69 3566 10.1063/1.117247
5. B. Yang A. Trampert O. Brandt B. Jenichen K.H. Ploog 1998 J. Appl. Phys. 83 3800 10.1063/1.367144
6. N.P. Kobayashi J.T. Kobayashi P.D. Dapkus W.-J. Choi A.E. Bond X. Zhang D.H. Rich 1997 Appl. Phys. Lett. 71 3569 10.1063/1.120394
7. L. Wang X. Liu Y. Zan J. Wang D. Wang D.-C. Lu Z. Wang 1998 Appl. Phys. Lett. 72 109 10.1063/1.120660 (Pubitemid 128671216)
8. W.J. Meng T.A. Perry 1994 J. Appl. Phys. 76 7824 10.1063/1.357916
9. A. Ohtani K.S. Stevens R. Beresford 1994 Appl. Phys. Lett. 65 61 10.1063/1.113074
10. E. Calleja M.A. Sánchez-García D. Basak F.J. Sánchez F. Calle P. Youinou E. Muñoz J.J. Serrano J.M. Blanco C. Villar T. Laine J. Oila K. Saarinen P. Hautojärvi C.H. Molloy D.J. Somerford I. Harrison 1998 Phys. Rev. B 58 1550 10.1103/PhysRevB.58.1550 and references therein
11. M. Godlewski J.P. Bergman B. Monemar U. Rossner A. Barski 1996 Appl. Phys. Lett. 69 2089 10.1063/1.116889
12. A. Bourret A. Barski J.L. Rouviére G. Renaud A. Barbier 1998 J. Appl. Phys. 83 2003 10.1063/1.366929
13. Schenk, H.P.D., Kaiser, U., Kipshidze, G.D., Fissel, A., Kräusslich, J., Hobert, H., Schulze, J., Richter, Wo.: Mat. Sci. Eng. B (in print)
14. H.P.D. Schenk G.D. Kipshidze U. Kaiser A. Fissel J. Kräusslich J. Schulze W. Richter 1999 J. Crystal Growth 200 45 10.1016/S0022-0248(98)01245-7
15. T. Lei M. Fanciulli R.J. Molnar T.D. Moustakas R.J. Graham J. Scanlon 1991 Appl. Phys. Lett. 59 944 10.1063/1.106309
16. P. Kung A. Saxler X. Zhang D. Walker T.C. Wang I. Ferguson M. Razeghi 1995 Appl. Phys. Lett. 66 2958 10.1063/1.114242
17. L.S. Chuah Z. Hassan S.S. Ng H. Abu Hassan 2007 J. Mater. Res. 22 9 2623 10.1557/jmr.2007.0336 (Pubitemid 47484740)
18. K.S. Stevens A. Ohtani M. Kinnigurgh R. Beresford 1994 Appl. Phys. Lett. 65 321 10.1063/1.112359
19. W.J. Meng T.A. Perry 1994 J. Appl. Phys. 76 7824 10.1063/1.357916
20. K. Yasutake A. Takeuchi H. Kakiuchi K. Yoshii 1998 J. Vac. Sci. Technol. A 16 2140
21. S. Strite H. Morkoc 1992 J. Vac. Sci. Technol. B 10 1237
22. Krüger, J., Sudhir, G.S., Corlatan, D., Cho, Y., Kim, Y., Klockenbrink, R., Rouvimov, S., Liliental-Weber, Z., Kisielowski, C., Rubin, M., Weber, E.R.: Mater. Res. Symp. Proc. 482 (1998)