-
1
-
-
0032679245
-
"InGaN-based uv/blue/green/amber/red LEDs"
-
T. Mukai, M. Yamada, and S. Nakamura, "InGaN-based uv/blue/green/ amber/red LEDs," Proc. SPIE 3621, 2-14 (1999).
-
(1999)
Proc. SPIE
, vol.3621
, pp. 2-14
-
-
Mukai, T.1
Yamada, M.2
Nakamura, S.3
-
2
-
-
51149220122
-
"30% external quantum efficiency from surface textured, thin-film light-emitting diodes"
-
I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Grnitter, and A. Scherer, "30% external quantum efficiency from surface textured, thin-film light-emitting diodes," Appl. Phys. Lett. 63(16), 2174-2176 (1993).
-
(1993)
Appl. Phys. Lett.
, vol.63
, Issue.16
, pp. 2174-2176
-
-
Schnitzer, I.1
Yablonovitch, E.2
Caneau, C.3
Grnitter, T.J.4
Scherer, A.5
-
3
-
-
0034227811
-
"40% efficient thin-film surface-textured light-emitting diodes by optimization of natural lithography"
-
R. Windisch, B. Dutta, M. Kuijk, A. Knobloch, S. Meinlschmidt, S. Schoberth, P. Kissel, G. Borghs, G. Dohler, and P. Heremans, "40% efficient thin-film surface-textured light-emitting diodes by optimization of natural lithography," IEEE Trans. Electron Devices 47 (7), 1492-1497 (2000).
-
(2000)
IEEE Trans. Electron Devices
, vol.47
, Issue.7
, pp. 1492-1497
-
-
Windisch, R.1
Dutta, B.2
Kuijk, M.3
Knobloch, A.4
Meinlschmidt, S.5
Schoberth, S.6
Kissel, P.7
Borghs, G.8
Dohler, G.9
Heremans, P.10
-
4
-
-
0035828580
-
"Impact of textured-enhanced transmission on high-efficiency surface-textured light-emitting diodes"
-
R. Windisch, C. Rooman, S. Meinlschmidt, P. Kissel, D. Zipperer, G. Dohler, B. Dutta, M. Muijk, G. Borghs, and P. Heremans, "Impact of textured-enhanced transmission on high-efficiency surface-textured light-emitting diodes," Appl. Phys. Lett. 79(15), 2315-2317 (2001).
-
(2001)
Appl. Phys. Lett.
, vol.79
, Issue.15
, pp. 2315-2317
-
-
Windisch, R.1
Rooman, C.2
Meinlschmidt, S.3
Kissel, P.4
Zipperer, D.5
Dohler, G.6
Dutta, B.7
Muijk, M.8
Borghs, G.9
Heremans, P.10
-
5
-
-
0032631399
-
"Efficiency improvement in light-emitting diodes based on geometrically deformed chips"
-
S. J. Lee and S. W. Song, "Efficiency improvement in light-emitting diodes based on geometrically deformed chips," Proc. SPIE 3621, 2-14 (1999).
-
(1999)
Proc. SPIE
, vol.3621
, pp. 2-14
-
-
Lee, S.J.1
Song, S.W.2
-
6
-
-
0043080206
-
05P/GaP light-emitting diodes exhibiting >50% external quantum efficiency"
-
05P/GaP light-emitting diodes exhibiting >50% external quantum efficiency," Appl. Phys. Lett. 75(16), 2365-2367 (1999).
-
(1999)
Appl. Phys. Lett.
, vol.75
, Issue.16
, pp. 2365-2367
-
-
Krames, M.R.1
Ochiai-Holcom, M.2
Hoffler, G.E.3
Carter-Coman, C.4
Chen, E.I.5
Tan, I.H.6
Grillot, P.7
Gardner, N.F.8
Chui, H.C.9
Huang, J.W.10
Stockman, S.A.11
Kish, F.A.12
Craford, M.G.13
Tan, T.S.14
Kocot, C.P.15
Hueschen, M.16
Posselt, J.17
Loh, B.18
Sasser, G.19
Collins, D.20
more..
-
7
-
-
0004628692
-
"Analysis of light-emitting diodes by Monte Carlo photon simulation"
-
S. J. Lee, "Analysis of light-emitting diodes by Monte Carlo photon simulation," Appl. Opt. 40(9), 1427-1437 (2001).
-
(2001)
Appl. Opt.
, vol.40
, Issue.9
, pp. 1427-1437
-
-
Lee, S.J.1
-
9
-
-
15744364924
-
"Electrode design for InGaN/sapphire light-emitting diodes based on multiple thin ohmic metal patches"
-
S. J. Lee, "Electrode design for InGaN/sapphire light-emitting diodes based on multiple thin ohmic metal patches," Proc. SPIE 5530, 338-346 (2004).
-
(2004)
Proc. SPIE
, vol.5530
, pp. 338-346
-
-
Lee, S.J.1
-
10
-
-
0010436436
-
"Twofold efficiency improvement in high performance AlGaInP light-emitting diodes in the 555-620 nm spectral region using a thick GaP window layer"
-
K. H. Hunag, J. G. Yu, C. P. Kuo, R. M. Fletcher, T. D. Osentowski, L. J. Stinson, and M. G. Craford, "Twofold efficiency improvement in high performance AlGaInP light-emitting diodes in the 555-620 nm spectral region using a thick GaP window layer," Appl. Phys. Lett. 61(9), 1045-1047 (1992).
-
(1992)
Appl. Phys. Lett.
, vol.61
, Issue.9
, pp. 1045-1047
-
-
Hunag, K.H.1
Yu, J.G.2
Kuo, C.P.3
Fletcher, R.M.4
Osentowski, T.D.5
Stinson, L.J.6
Craford, M.G.7
-
11
-
-
0032205616
-
"Analysis of InGaN high-brightness light-emitting diodes"
-
S. J. Lee, "Analysis of InGaN high-brightness light-emitting diodes," Jpn. J. Appl. Phys., Part 1 37(11), 5990-5993 (1998).
-
(1998)
Jpn. J. Appl. Phys.
, vol.37
, Issue.11 PART 1
, pp. 5990-5993
-
-
Lee, S.J.1
|