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Volumn 45, Issue 1, 2006, Pages

Study of photon extraction efficiency in InGaN light-emitting diodes depending on chip structures and chip-mount schemes

Author keywords

Light emitting diode; Monte Carlo analysis; Photon extraction efficiency

Indexed keywords

COMPUTER SIMULATION; MONTE CARLO METHODS; PHOTONS; REFRACTIVE INDEX; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

EID: 33748590310     PISSN: 00913286     EISSN: 15602303     Source Type: Journal    
DOI: 10.1117/1.2151194     Document Type: Article
Times cited : (25)

References (12)
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    • Lee, S.J.1    Song, S.W.2
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    • 0004628692 scopus 로고    scopus 로고
    • "Analysis of light-emitting diodes by Monte Carlo photon simulation"
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    • Lee, S.J.1
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    • K. H. Hunag, J. G. Yu, C. P. Kuo, R. M. Fletcher, T. D. Osentowski, L. J. Stinson, and M. G. Craford, "Twofold efficiency improvement in high performance AlGaInP light-emitting diodes in the 555-620 nm spectral region using a thick GaP window layer," Appl. Phys. Lett. 61(9), 1045-1047 (1992).
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    • "Analysis of InGaN high-brightness light-emitting diodes"
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    • Lee, S.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.