SONOS type memory cell with ALD LaAlO blocking oxide for high speed operation

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volumn , Issue , 2008, Pages 835-838

  He, Wei ^a   Chan, Daniel S H ^a   Cho, Byung Jin ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BLOCKING LAYERS; CONTROL SAMPLES; HIGH OPERATION VOLTAGES; HIGH STRESS; HIGH-SPEED OPERATIONS; LIMITING BEHAVIORS; MEMORY APPLICATIONS; MEMORY CELLS; OPERATION SPEED; SONOS DEVICES; THERMALLY STABLES;

INTEGRATED CIRCUITS; LANTHANUM ALLOYS;

FLASH MEMORY;

EID: 60649102105     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2008.4734672     Document Type: Conference Paper

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