Gas assisted focused electron beam induced etching of alumina

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 6, 2009, Pages 2727-2731

  Bret, T ^a   Afra, B ^b   Becker, R ^a   Hofmann, Th ^a   Edinger, K ^a   Liang, T ^c   Hoffmann, P ^b  

^a CARL ZEISS SMT AG   (Germany)

^b EPFL   (Switzerland)

^c INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA PARTICLES; ALUMINUM OXIDES; ASSIST GAS; BRAGG MIRRORS; ELECTRON INDUCED REACTIONS; EUV MASK; EXTREME ULTRAVIOLETS; FOCUSED ELECTRON BEAMS; MONTE CARLO; POTENTIAL CONTAMINANTS; TANTALUM NITRIDES; THERMODYNAMIC DRIVING FORCES; UNDERLYING LAYERS;

CHLORINE; CHLORINE COMPOUNDS; ELECTRON BEAMS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRONS; ETCHING; EXTREME ULTRAVIOLET LITHOGRAPHY; MASKS; NITRIDES; RUTHENIUM; TANTALUM; TANTALUM COMPOUNDS; ULTRAVIOLET DEVICES;

ALUMINA;

EID: 72849129807     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3243208     Document Type: Conference Paper

References (23)

1. L. J. Beckham, W. A. Fessler, and M. A. Kise, Chem. Rev. (Washington, D.C.) 48, 319 (1951).
2. I. Utke, P. Hoffmann, and J. Melngailis, J. Vac. Sci. Technol. B 26, 1197 (2008).
3. A. E. Ennos, Br. J. Appl. Phys. 5, 27 (1954).
4. A. G. Baker and W. C. Morris, Rev. Sci. Instrum. 32, 458 (1961).
5. R. W. Christy, J. Appl. Phys. 31, 1680 (1960).
6. J. W. Coburn and H. F. Winters, J. Appl. Phys. 50, 3189 (1979).
7. A. Perentes and P. Hoffmann, Chem. Vap. Deposition 13, 176 (2007).
8. I. Utke, A. Luisier, P. Hoffmann, D. Laub, and P. A. Buffat, Appl. Phys. Lett. 81, 3245 (2002).
9. P. Hoffmann, I. Utke, and F. Cicoira, Proc. SPIE 5023, 4 (2003).
10. T. Liang, A. R. Stivers, M. Penn, D. Bald, Ch. Sethi, V. Boegli, M. Budach, K. Edinger, and P. Spies, Proc. SPIE 5446, 291 (2004).
11. K. Edinger et al., Proc. SPIE 5256, 1222 (2003).
12. J. W. Park, A. J. Pedraza, and W. R. Allen, J. Vac. Sci. Technol. A 14, 286 (1996).
13. M. E. Mochel, I. A. Eades, M. Metzger, J. D. Meyer, and J. M. Mochel, Appl. Phys. Lett. 44, 502 (1984).
14. P. Y. Yan, G. Zhang, E. Spiller, and P. B. Mirkarimi, Proc. SPIE 5446, 824 (2004).
15. M. G. Lassiter, T. Liang, and P. D. Rack, J. Vac. Sci. Technol. B 26, 963 (2008).
16. T. Bret, I. Utke, P. Hoffmann, M. Abourida, and P. Doppelt, Microelectron. Eng. 83, 1482 (2006).
17. P. Atkins and J. de Paula, Atkins' Physical Chemistry, 8th ed. (Oxford University Press, Oxford, 2006), p. 995.
18. B. Brunetti, V. Piacente, and P. Scardala, J. Chem. Eng. Data 54, 940 (2009).
19. K. T. Jacob, C. Shekhar, and Y. Waseda, J. Chem. Thermodyn. 41, 748 (2009).
20. P. Gross, C. Hayman, D. L. Levi, and G. I. Wilson, Trans. Faraday Soc. 56, 318 (1960).
21. J. Aarik, K. Kukli, A. Aidla, and L. Pung, Appl. Surf. Sci. 103, 331 (1996).
22. A. Niskanen, T. Hatanpää, M. Ritala, and M. Leskelä, J. Therm Anal. Calorim. 64, 955 (2001).
23. H.-J. Cantow, H. Hillebrecht, S. N. Magonov, R. W. Rotter, M. Drechsler, and G. Thule, Angew. Chem., Int. Ed. Engl. 29, 537 (1990).