Strained and unstrained Si nanowire FETs

ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference

Volumn , Issue , 2009, Pages 323-326

  Feste, S P ^a   Habicht, S ^a   Zhao, Q T ^a   Buca, D ^a   Mantl, S ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT TRANSPORT; IV CHARACTERISTICS; ON-CURRENTS; SI NANOWIRE; STRAINED-SOI; SUBTHRESHOLD SLOPE; TOP-DOWN APPROACH; UNIAXIAL TENSILE STRAIN;

CRYSTAL ORIENTATION; FIELD EFFECT TRANSISTORS; NANOWIRES; SEMICONDUCTING SILICON COMPOUNDS; SILICON; TENSILE STRAIN;

MESFET DEVICES;

EID: 72849111841     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2009.5331614     Document Type: Conference Paper

References (16)

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