High-detectivity and high-single-photon-detectionefficiency 4H-SiC avalanche photodiodes

IEEE Journal of Quantum Electronics

Volumn 45, Issue 3, 2009, Pages 300-303

  Bai, Xiaogang ^a   Liu, Han Din ^a   Mcintosh, Dion C ^a   Campbell, Joe C ^a  

^a University of Virginia   (United States)

Author keywords

Avalanche photodiodes (APDs); Photodetector; Silicon carbide; Ultraviolet (UV) detector

Indexed keywords

DARK-COUNT PROBABILITY; DETECTIVITY; DIFFERENTIAL RESISTANCES; EXTERNAL QUANTUM EFFICIENCY; GEIGER MODE OPERATION; HIGH GAIN; ROOM TEMPERATURE; SINGLE-PHOTON DETECTION EFFICIENCIES; SPECIFIC DETECTIVITY; ULTRA-VIOLET; ULTRAVIOLET (UV) DETECTOR; UNITY GAIN; WINDOW STRUCTURE; ZERO BIAS;

AVALANCHE PHOTODIODES; OPTOELECTRONIC DEVICES; PARTICLE BEAMS; PHOTODETECTORS; PHOTODIODES; PHOTONS; SEMICONDUCTOR QUANTUM DOTS; SILICON CARBIDE;

QUANTUM EFFICIENCY;

EID: 72549105268     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2009.2013093     Document Type: Article

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