Edge Breakdown in 4H-SiC Avalanche Photodiodes

IEEE Journal of Quantum Electronics

Volumn 40, Issue 3, 2004, Pages 321-324

  Beck, Ariane L ^a   Yang, Bo ^a   Guo, Xiangyi ^a   Campbell, Joe C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Avalanche multiplication; Avalanche photodiodes (APDs); Impact ionization; Ionization coefficient; Photodetectors; SiC

Indexed keywords

AVALANCHE DIODES; IMPACT IONIZATION; PHOTOCURRENTS; PHOTODETECTORS; PHOTOMULTIPLIERS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; REACTIVE ION ETCHING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SILICON CARBIDE; SILICON WAFERS; ULTRAVIOLET RADIATION;

AVALANCHE MULTIPLICATION; AVALANCHE PHOTODIODES (APDS); IONIZATION COEFFICIENTS; SILICON CARBIDE (SIC);

PHOTODIODES;

EID: 1842431406     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2003.823033     Document Type: Article

References (5)

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