Low-noise visible-blind UV avalanche photodiodes with edge terminated by 2° positive bevel

Electronics Letters

Volumn 38, Issue 7, 2002, Pages 335-336

  Yan, F ^a   Qin, C ^a   Zhao, J H ^a   Weiner, M ^a   Ng, B K ^a   David, J P R ^a   Tozer, R C ^a  

^a RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; INTEGRATED CIRCUIT MANUFACTURE; LEAKAGE CURRENTS; PHOTOCURRENTS; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE; SPURIOUS SIGNAL NOISE; SUBSTRATES; ULTRAVIOLET DEVICES;

AVALANCHE GAIN; AVALANCHE NOISE; AVALANCHE PHOTODIODE;

PHOTODIODES;

EID: 0037187703     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020216     Document Type: Article

References (6)

1. Ionization rates and critical fields in 4H-SiC
2. Theoretical prediction of zinc blende phase GaN avalanche photodiode performance based on numerically calculated electron and hole impact ionization rate ratio: III-nitride. SiC and diamond materials for electronic devices
3. A novel technology for the formation of a very small bevel angle for high electric field edge termination
4. + diodes
5. Multiplication noise in uniform avalanche diodes
6. Absorption coefficient of 4H-SiC from 3900 to 3250 A