Demonstration of ultraviolet separate absorption and multiplication 4H-SiC avalanche photodiodes

IEEE Photonics Technology Letters

Volumn 18, Issue 1, 2006, Pages 136-138

  Guo, Xiangyi ^a   Rowland, Larry B ^b   Dunne, Greg T ^b   Fronheiser, Jody A ^b   Sandvik, Peter M ^b   Beck, Ariane L ^a   Campbell, Joe C ^a  

^a The University of Texas at Austin   (United States)

^b GE GLOBAL RESEARCH   (United States)

Author keywords

Avalanche photodiodes (APDs); Silicon carbide (SiC); Ultraviolet (UV)

Indexed keywords

GAIN CONTROL; QUANTUM EFFICIENCY; SILICON CARBIDE; ULTRAVIOLET RADIATION;

EDGE BREAKDOWN; ULTRAVIOLET SEPARATE ABSORPTION;

AVALANCHE PHOTODIODES;

EID: 33745798957     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2005.860384     Document Type: Article

References (10)

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