Low dark count rate 4H-SiC Geiger mode avalanche photodiodes operated under gated quenching at 325nm

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6372, Issue , 2006, Pages

  Beck, Ariane L ^a   Guo, Xiangyi ^b   Liu, Han Din ^b   Ghatak roy, Aruna ^a   Campbell, Joe C ^b  

^a The University of Texas at Austin   (United States)

^b University of Virginia   (United States)

Author keywords

Avalanche photodiode; Geiger mode; SiC; Ultraviolet

Indexed keywords

GEIGER MODE; SINGLE PHOTON COUNTING AVALANCHE PHOTODIODES (SPAD); SINGLE PHOTON DETECTION EFFICIENCY (SPDE);

PHOTODIODES; PHOTOMULTIPLIERS; PHOTONS; QUENCHING; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

AVALANCHE DIODES;

EID: 33846205585     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.685417     Document Type: Conference Paper

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