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Journal of Applied Physics

Volumn 106, Issue 11, 2009, Pages

Electrical response of highly ordered organic thin film metal-insulator-semiconductor devices

(7) Ullah, Mujeeb a Taylor, D M b Schwodiauer R a Sitter, H a Bauer, S a Sariciftci, N S a Singh, Th B a,c

a JOHANNES KEPLER UNIVERSITY LINZ (Austria)

b BANGOR UNIVERSITY (United Kingdom)

c CSIRO (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

BENZOCYCLOBUTENE; CAPACITANCE VOLTAGE; CIRCUIT RESPONSE; CURRENT-VOLTAGE MEASUREMENTS; DEPLETION REGION; DISILOXANE; ELECTRICAL PROPERTY; ELECTRICAL RESPONSE; EQUIVALENT CIRCUIT MODEL; EXPERIMENTAL DATA; GATE VOLTAGES; HIGH ELECTRON MOBILITY; INSULATION RESISTANCE; METAL INSULATOR SEMICONDUCTOR CAPACITORS; MIS CAPACITORS; N-CHANNEL DEVICES; ORGANIC FIELD-EFFECT TRANSISTORS; ORGANIC THIN FILMS; SMALL SIGNAL; VOLTAGE DEPENDENCE;

BUTENES; CAPACITANCE; CAPACITORS; ELECTRON MOBILITY; GATE DIELECTRICS; GATES (TRANSISTOR); HETEROJUNCTION BIPOLAR TRANSISTORS; INSULATION; METAL INSULATOR BOUNDARIES; MIM DEVICES; MIS DEVICES; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR INSULATOR BOUNDARIES; SWITCHING CIRCUITS; THIN FILMS;

FIELD EFFECT TRANSISTORS;

EID: 72449144617 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3267045 Document Type: Article

Times cited : (28)

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