Admittance Measurements on OFET Channel and Its Modeling With R-C Network

IEEE Electron Device Letters

Volumn 28, Issue 3, 2007, Pages 204-206

  Jung, Keum Dong ^a   An Lee, Cheon ^a   Park, Dong Wook ^a   Park, Byung Gook ^a   Shin, Hyungcheol ^a   Lee, Jong Duk ^a  

^a Seoul National University   (South Korea)

Author keywords

Admittance measurement; channel; maximum; MIS structure; modeling; operating frequency; organic field effect transistors (OFETs); pentacene; R C network

Indexed keywords

EID: 85008042579     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/LED.2007.891256     Document Type: Article

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