High-mobility n-channel organic field-effect transistors based on epitaxially grown C60 films

Organic Electronics

Volumn 6, Issue 3, 2005, Pages 105-110

  Singh, Th B ^a   Marjanovic N ^a   Matt, G J ^a   Gunes S ^a   Sariciftci, N S ^a   Ramil, A Montaigne ^a   Andreev, A ^a   Sitter, H ^a   Schwodiauer R ^a   Bauer, S ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DIELECTRIC MATERIALS; EPITAXIAL GROWTH; SINGLE CRYSTALS; THERMODYNAMIC PROPERTIES; THIN FILMS;

HOT WALL EPITAXY; ORGANIC FIELD EFFECT TRANSISTORS (OFET); RADIO FREQUENCY IDENTIFICATION TAGS (RFID-TAGS); RUBRENE;

FIELD EFFECT TRANSISTORS;

EID: 20344403994     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2005.03.006     Document Type: Article

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