Interface states in polyfluorene-based metal-insulator-semiconductor devices

Organic Electronics

Volumn 8, Issue 5, 2007, Pages 591-600

  Yun, M ^a   Gangopadhyay, S ^a   Bai, M ^b   Taub, H ^b   Arif, M ^b   Guha, S ^b  

^a University of Missouri   (United States)

^b UNIVERSITY OF MISSOURI   (United States)

Author keywords

Capacitance voltage characteristics; MIS diode; Polyfluorene

Indexed keywords

ATOMIC FORCE MICROSCOPY; FLUORINE CONTAINING POLYMERS; HYBRID MATERIALS; HYSTERESIS; INTERFACES (MATERIALS); NATURAL FREQUENCIES; NEMATIC LIQUID CRYSTALS; THERMAL CYCLING;

ATOMIC FORCE MICROSCOPE IMAGES; CAPACITANCE VOLTAGE CHARACTERISTICS; INSULATOR INTERFACE; POLYMER SEMICONDUCTORS;

SEMICONDUCTOR DEVICES;

EID: 34548813633     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2007.04.007     Document Type: Article

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