-
3
-
-
27144461207
-
-
JAPIAU 0021-8979 10.1063/1.2081109.
-
I. Torres and D. M. Taylor, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2081109 98, 073710 (2005).
-
(2005)
J. Appl. Phys.
, vol.98
, pp. 073710
-
-
Torres, I.1
Taylor, D.M.2
-
5
-
-
33344478723
-
-
SYMEDZ 0379-6779 10.1016/j.synthmet.2005.10.015.
-
E. Itoh, I. Torres, C. Hayden, and D. M. Taylor, Synth. Met. SYMEDZ 0379-6779 10.1016/j.synthmet.2005.10.015 156, 129 (2006).
-
(2006)
Synth. Met.
, vol.156
, pp. 129
-
-
Itoh, E.1
Torres, I.2
Hayden, C.3
Taylor, D.M.4
-
6
-
-
40849146991
-
-
MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley, New York).
-
E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley, New York, 1982).
-
(1982)
-
-
Nicollian, E.H.1
Brews, J.R.2
-
7
-
-
0029544683
-
-
JPAPBE 0022-3727 10.1088/0022-3727/28/12/025.
-
D. M. Taylor and H. L. Gomes, J. Phys. D JPAPBE 0022-3727 10.1088/0022-3727/28/12/025 28, 2554 (1995).
-
(1995)
J. Phys. D
, vol.28
, pp. 2554
-
-
Taylor, D.M.1
Gomes, H.L.2
-
8
-
-
40849139161
-
-
Microelectronic Devices and Circuits (McGraw-Hill, New York)
-
C. G. M. Fonstad, Microelectronic Devices and Circuits (McGraw-Hill, New York, 1994), p 254.
-
(1994)
, pp. 254
-
-
Fonstad, C.G.M.1
-
9
-
-
85008042579
-
-
EDLEDZ 0741-3106 10.1109/LED.2007.891256.
-
K.-D. Jung, C. A. Lee, D.-W. Park, B.-G. Park, H. Shin, and J. D. Lee, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2007.891256 28, 204 (2007).
-
(2007)
IEEE Electron Device Lett.
, vol.28
, pp. 204
-
-
Jung, K.-D.1
Lee, C.A.2
Park, D.-W.3
Park, B.-G.4
Shin, H.5
Lee, J.D.6
-
11
-
-
0347682123
-
-
PRLTAO 0031-9007 10.1103/PhysRevLett.91.216601.
-
C. Tanase, E. J. Meijer, P. W. M. Blom, and D. M. de Leeuw, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.91.216601 91, 216601 (2003).
-
(2003)
Phys. Rev. Lett.
, vol.91
, pp. 216601
-
-
Tanase, C.1
Meijer, E.J.2
Blom, P.W.M.3
De Leeuw, D.M.4
-
12
-
-
0026257577
-
-
JPAPBE 0022-3727 10.1088/0022-3727/24/11/019.
-
D. M. Taylor, H. L. Gomes, A. E. Underhill, S. Edge, and P. I. Clemenson, J. Phys. D JPAPBE 0022-3727 10.1088/0022-3727/24/11/019 24, 2032 (1991).
-
(1991)
J. Phys. D
, vol.24
, pp. 2032
-
-
Taylor, D.M.1
Gomes, H.L.2
Underhill, A.E.3
Edge, S.4
Clemenson, P.I.5
-
13
-
-
0019056629
-
-
SSELA5 0038-1101 10.1016/0038-1101(80)90064-7.
-
W. A. Hill and C. C. Coleman, Solid-State Electron. SSELA5 0038-1101 10.1016/0038-1101(80)90064-7 23, 987 (1980).
-
(1980)
Solid-State Electron.
, vol.23
, pp. 987
-
-
Hill, W.A.1
Coleman, C.C.2
-
14
-
-
27144518763
-
-
PRLTAO 0031-9007 10.1103/PhysRevLett.95.016602.
-
V. Podzorov and M. E. Gershenson, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.95.016602 95, 016602 (2005).
-
(2005)
Phys. Rev. Lett.
, vol.95
, pp. 016602
-
-
Podzorov, V.1
Gershenson, M.E.2
-
15
-
-
33645502724
-
-
JAPIAU 0021-8979 10.1063/1.2170421.
-
C. Goldmann, C. Krellner, P. Pernstich, S. Haas, D. J. Gundlach, and B. Batlogg, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2170421 99, 034507 (2006).
-
(2006)
J. Appl. Phys.
, vol.99
, pp. 034507
-
-
Goldmann, C.1
Krellner, C.2
Pernstich, P.3
Haas, S.4
Gundlach, D.J.5
Batlogg, B.6
-
16
-
-
0041339891
-
-
JAPIAU 0021-8979 10.1063/1.1581352.
-
A. Salleo and R. A. Street, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1581352 94, 471 (2003).
-
(2003)
J. Appl. Phys.
, vol.94
, pp. 471
-
-
Salleo, A.1
Street, R.A.2
-
17
-
-
33947159598
-
-
APPLAB 0003-6951 10.1063/1.2711531.
-
J. Lancaster, D. M. Taylor, P. Sayers, and H. L. Gomes, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2711531 90, 103513 (2007).
-
(2007)
Appl. Phys. Lett.
, vol.90
, pp. 103513
-
-
Lancaster, J.1
Taylor, D.M.2
Sayers, P.3
Gomes, H.L.4
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