SCOPUS 정보 검색 플랫폼

Applied Physics A: Materials Science and Processing

Volumn 98, Issue 1, 2010, Pages 187-194

(100) MgAl2O4 as a lattice-matched substrate for the epitaxial thin film deposition of the relaxor ferroelectric PMN-PT

(10) Keogh, D a,b Chen, Z a Hughes, R A b Dabkowski, A b Marinov, O a Maunders, C a,b Gunawan, L a Deen, M J a Preston, J S a,b Botton, G A a,b

a MCMASTER UNIVERSITY (Canada)

b MCMASTER UNIVERSITY (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC CONSTANTS; DIELECTRIC RESPONSE; DIFFUSE PHASE TRANSITIONS; EPITAXIAL THIN FILMS; FACETED SURFACES; FERROELECTRIC SUPERLATTICE; FILM-SUBSTRATE INTERFACES; FREQUENCY DISPERSION; FREQUENCY-DEPENDENT; LATTICE-MATCHED; LATTICE-MATCHED SUBSTRATES; MICRO-STRUCTURAL; OXIDE SUBSTRATES; PULSED-LASER DEPOSITION TECHNIQUE; PYROCHLORE PHASE; RELAXOR FERROELECTRIC; RELAXOR MATERIALS; RELAXORS; SUBSTRATE MATERIAL; THIN-FILM DEPOSITIONS; TOP SURFACE;

CRYSTAL GROWTH; CRYSTAL MICROSTRUCTURE; DEPOSITION; FERROELECTRIC MATERIALS; FERROELECTRICITY; FILM GROWTH; FREQUENCY RESPONSE; LATTICE MISMATCH; NIOBIUM; PHASE INTERFACES; PHASE TRANSITIONS; PULSED LASER DEPOSITION; SINGLE CRYSTAL SURFACES; THIN FILM DEVICES; THIN FILMS;

SUBSTRATES;

EID: 71249108886 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-009-5372-2 Document Type: Article

Times cited : (7)

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