Growth of orientation-controlled Pb(Mg,Nb)O3-PbTiO3 thin films on Si(100) by using oriented MgO films as buffers

Applied Physics A: Materials Science and Processing

Volumn 81, Issue 6, 2005, Pages 1145-1149

  Chen, X Y ^a,b   Wang, J ^b   Wong, K H ^b   Mak, C L ^b   Chen, G X ^a   Liu, J M ^a   Wang, M ^a   Liu, Z G ^a  

^a NANJING UNIVERSITY   (China)

^b HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; ELECTRODES; FERROELECTRIC MATERIALS; FILM GROWTH; LANTHANUM COMPOUNDS; MAGNESIA; PERMITTIVITY; POLYCRYSTALLINE MATERIALS; PULSED LASER DEPOSITION; SILICON; THIN FILMS;

BUFFERS; DIELECTRIC PERMITTIVITY; LOSS FACTOR; RELAXORS;

LEAD COMPOUNDS;

EID: 24144432082     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-004-3068-1     Document Type: Article

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