Structural and transport properties of epitaxial niobium-doped BaTiO 3 films

Applied Physics Letters

Volumn 93, Issue 19, 2008, Pages

  Shao, Y ^a   Hughes, R A ^b   Dabkowski, A ^b   Radtke, G ^b   Gong, W H ^b   Preston, J S ^b   Botton, G A ^a  

^a MCMASTER UNIVERSITY   (Canada)

^b MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM; OXYGEN; SEMICONDUCTOR GROWTH; TRANSITION METALS; TRANSPORT PROPERTIES;

CRYSTALLINITY; HIGH TEMPERATURES; MAGNETIC MEASUREMENTS; METAL TRANSITIONS; OPTIMUM GROWTH CONDITIONS; OXIDATION STATES; OXYGEN EXPOSURES; SEMI-CONDUCTORS; SINGLE PHASE FILMS; SOLUBILITY LIMITS; SPIN MOMENTS; TEMPERATURE DEPENDENTS; X-RAY DIFFRACTIONS;

NIOBIUM;

EID: 56249103433     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3025434     Document Type: Article

References (20)

1. M. Sayer and K. Sreenivas, Science 247, 1056 (1990).
2. R. E. Cohen, Nature (London) 358, 136 (1992).
3. H. M. Chan, M. P. Harmer, and D. M. Smyth, J. Am. Ceram. Soc. 69, 507 (1986).
4. S. R. Gilbert, J. Appl. Phys. 80, 969 (1996).
5. T. B. Wu and J. N. Lin, J. Am. Ceram. Soc. 77, 759 (1994).
6. S. H. Yoon, K. H. Lee, and H. Kim, J. Am. Ceram. Soc. 83, 2463 (2000).
7. S. H. Yoon and H. Kim, J. Appl. Phys. 92, 1039 (2002).
8. T. Kolodiazhnyi and S. C. Wimbush, Phys. Rev. Lett. 96, 246404 (2006).
9. D. Nagano, Appl. Phys. Lett. 72, 2017 (1998).
10. V. A. Gasparov, S. N. Ermolov, and G. K. Strukova, Phys. Rev. B 63, 174512 (2001).
11. N. Leḿe, J. Cryst. Growth 235, 347 (2002).
12. L. F. Liu, J. Appl. Phys. 97, 054102 (2005).
13. Y. H. Huang, Appl. Phys. Lett. 88, 061919 (2006).
14. M. N. Khan, J. Appl. Phys. 86, 2307 (1999).
15. J. F. Marucco, J. Alloys Compd. 263, 454 (1997).
16. F. M. F. de Groot, Phys. Rev. B 42, 5459 (1990).
17. M. Abbate, Phys. Rev. B 44, 5419 (1991).
18. P. F. Schofield, J. Synchrotron Radiat. 2, 93 (1995).
19. J. Y. Chang, J. Appl. Phys. 85, 2318 (1999).
20. T. Tomio, J. Appl. Phys. 76, 5886 (1994).