The role of lattice misfit strains in the deposition of epitaxial (Ba1-ySry)Ti0.5Nb0.5O3 films

Journal of Crystal Growth

Volumn 311, Issue 9, 2009, Pages 2753-2758

  Shao, Y ^a   Hughes, R A ^b   Dabkowski, A ^b   Britten, J F ^b   Lazar, S ^b,c   Preston, J S ^b   Botton, G A ^a  

^a MCMASTER UNIVERSITY   (Canada)

^b MCMASTER UNIVERSITY   (Canada)

^c Thermo Fisher Scientific   (United States)

Author keywords

A1. Interfaces; A1. Strain; A3. Epitaxial; A3. Thin film; B1. Niobium doped BaTiO3; B2. Conductive oxide

Indexed keywords

A1. INTERFACES; A1. STRAIN; A3. EPITAXIAL; A3. THIN FILM; B1. NIOBIUM-DOPED BATIO3; B2. CONDUCTIVE OXIDE;

BARIUM; CRYSTAL GROWTH; EPITAXIAL FILMS; METALLIC COMPOUNDS; MOLECULAR BEAM EPITAXY; NIOBIUM; OXIDE FILMS; PULSED LASER DEPOSITION; SODIUM COMPOUNDS; STRAIN; STRONTIUM; THIN FILM DEVICES; TRANSITION METALS; TRANSMISSION ELECTRON MICROSCOPY;

SUBSTRATES;

EID: 65349104483     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.03.008     Document Type: Article

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