Deep levels in low-energy electron-irradiated 4H-SiC

Physica Status Solidi - Rapid Research Letters

Volumn 3, Issue 4, 2009, Pages 121-123

  Carlsson, P ^a   Son, N T ^a   Beyer, F C ^a   Pedersen, H ^a   Isoya, J ^b   Morishita, N ^c   Ohshima, T ^c   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON VACANCY; CHEMICAL VAPOUR DEPOSITION; DEEP LEVEL; DLTS; ELECTRON PARAMAGNETIC RESONANCE; EPR SIGNALS; FREESTANDING FILMS; IONIZATION ENERGIES; LOW ENERGIES; LOW ENERGY ELECTRONS; NEGATIVE CHARGE; PHOTON ENERGY; RELATIVE INTENSITY; SINGLE DONOR;

CARBON FILMS; ELECTRON IRRADIATION; ELECTRON RESONANCE; ELECTRON SPIN RESONANCE SPECTROSCOPY; ELECTRONS; EPITAXIAL LAYERS; PARAMAGNETIC RESONANCE; PARAMAGNETISM; PHOTOEXCITATION; QUANTUM THEORY; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 71149114224     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.200903060     Document Type: Article

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