Effect of nanoporous GaN templates with different pore diameters on the subsequent thick GaN layers by HVPE

Solid State Communications

Volumn 150, Issue 3-4, 2010, Pages 168-171

  Wang, X Z ^a,b   Yu, G H ^a   Lin, C T ^a,c   Cao, M X ^a,c   Gong, H ^a   Qi, M ^a   Li, A Z ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b SHENZHEN INSTITUTE OF INFORMATION TECHNOLOGY   (China)

^c UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

A. GaN; A. HVPE; D. PL; D. XRD

Indexed keywords

CROSS-SECTIONAL OBSERVATIONS; GAN FILM; GAN LAYERS; GAN TEMPLATE; HYDRIDE VAPOR PHASE EPITAXY; NANOPOROUS GAN; OPTIMUM DIAMETERS; OPTIMUM VALUE; PORE DIAMETERS; SEM; XRD;

CRYSTAL GROWTH; GALLIUM ALLOYS; NANOPORES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM COMPOUNDS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRIDE;

EID: 70749125802     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2009.10.025     Document Type: Article

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