Technology assessment of a novel high-yield lithographic technique for sub-15-nm direct nanotransfer printing of nanogap electrodes

IEEE Transactions on Nanotechnology

Volumn 8, Issue 6, 2009, Pages 662-670

  Harrer, Stefan ^a   Strobel, Sebastian ^b   Penso Blanco, Guillermo ^c   Scarpa, Giuseppe ^c   Abstreiter, Gerhard ^b   Tornow, Marc ^d   Lugli, Paolo ^c  

^a IBM   (United States)

^b WALTER SCHOTTKY INSTITUT   (Germany)

^c TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^d TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

Electrodes; GaAs AlGaAs; Gap; Hard on hard; Molecular beam epitaxy (MBE); Nanofabrication; Nanoscale transfer printing (nTP); PdAu; Ti

Indexed keywords

ELECTRONIC MEASUREMENTS; GAAS/ALGAAS; GAP LENGTH; GRATING STRUCTURES; HARD MOLDS; HARD SUBSTRATE; ISOLATION CHARACTERISTICS; MOLD SURFACES; NANO SCALE; NANOFABRICATION; NANOGAP ELECTRODES; NANOMETER RESOLUTIONS; NANOSCALE STRUCTURE; NANOTRANSFER PRINTING; OPTICAL LITHOGRAPHY; REDUCTION TECHNIQUES; RELEASE AGENT; ROOM TEMPERATURE; SUPPORTING STRUCTURE; TECHNOLOGICAL ASPECTS; TECHNOLOGY ASSESSMENTS; TRANSFER PATTERNS; TRANSFER PRINTING; WET CHEMICALS;

ASPECT RATIO; CRYSTAL GROWTH; ELECTRODES; FABRICATION; ION BEAM LITHOGRAPHY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOSTRUCTURED MATERIALS; PHOTOLITHOGRAPHY; PLASMA ETCHING; PRINTING; SANDWICH STRUCTURES; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES; TECHNOLOGICAL FORECASTING; TITANIUM;

MOLDS;

EID: 70749110460     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2009.2024685     Document Type: Article

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