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Journal of Applied Physics

Volumn 106, Issue 9, 2009, Pages

Growth kinetics of Ge crystals on silicon oxide by nanoscale silicon seed induced lateral epitaxy

(7) Cammilleri, V D a Yam, V a Fossard, F a Renard, C a Bouchier, D a Fazzini, P F b Htch, M b

a UNIV PARIS SUD (France)

b UNIVERSITÉ DE TOULOUSE (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLETE WETTING; EPITAXIAL RELATIONS; GEOMETRIC PHASE ANALYSIS; LATERAL EPITAXY; LOCAL OXIDATION OF SILICONS; LONGITUDINAL AXIS; MISFIT DISLOCATIONS; NANO SCALE; RECIPROCAL SPACE MAPS; SEED ORIENTATION; SILICON SUBSTRATES; WETTING MECHANISM;

BIOACTIVITY; COALESCENCE; CRYSTAL GROWTH; CRYSTALS; DISLOCATIONS (CRYSTALS); GERMANIUM; GROWTH KINETICS; HETEROJUNCTIONS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON COMPOUNDS; WETTING; X RAY DIFFRACTION ANALYSIS;

SILICON OXIDES;

EID: 70450275792 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3245329 Document Type: Article

Times cited : (10)

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