Epitaxial growth of Ge on a thin SiO2 layer by ultrahigh vacuum chemical vapor deposition

Journal of Crystal Growth

Volumn 308, Issue 1, 2007, Pages 26-29

  Halbwax, M ^a,b   Renard, C ^a,b   Cammilleri, D ^a,b   Yam, V ^a,b   Fossard, F ^a,b   Bouchier, D ^a,b   Zheng, Y ^c   Rzepka, E ^d  

^a CNRS   (France)

^b UNIVERSITÉ PARIS SACLAY   (France)

^c INSTITUT DES NANOSCIENCES DE PARIS   (France)

^d LABORATOIRE DES SCIENCES DU CLIMAT ET DE L ENVIRONNEMENT   (France)

Author keywords

A1. Crystal structure; A1. Reflection high energy electron diffraction; A3. Chemical vapor deposition processes; B1. Germanium silicon alloys

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; GERMANIUM ALLOYS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; STACKING FAULTS; ULTRAHIGH VACUUM;

GERMANIUM SILICON ALLOYS; NUCLEATION SITES; SILICA LAYERS; ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION;

EPITAXIAL GROWTH;

EID: 34748886038     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.07.047     Document Type: Article

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