Morphological evolution and strain relaxation of Ge islands grown on chemically oxidized Si(100) by molecular-beam epitaxy

Journal of Applied Physics

Volumn 98, Issue 7, 2005, Pages

  Li, Qiming ^a   Pattada, Belliappa ^a   Brueck, Steve R J ^a   Hersee, Stephen ^a   Han, Sang M ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GE EPILAYER; HIGH-CRYSTALLINE QUALITY; LATTICE MISMATCH; TOUCHDOWN PROCESS;

COALESCENCE; CRYSTAL GROWTH; GERMANIUM COMPOUNDS; GRAIN BOUNDARIES; HETEROJUNCTIONS; LATTICE CONSTANTS; MORPHOLOGY; STRESS RELAXATION;

MOLECULAR BEAM EPITAXY;

EID: 27144517440     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2067708     Document Type: Article

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