Less strain energy despite fewer misfit dislocations: The impact of ordering

Physical Review Letters

Volumn 96, Issue 6, 2006, Pages

  Schmidt, Th ^a,b   Kroger R ^a,b   Flege, J I ^a,b   Clausen, T ^a,b   Falta, J ^a,b   Janzen, A ^b   Zahl, P ^b   Kury, P ^b   Kammler, M ^b   Horn Von Hoegen, M ^b  

^a UNIVERSITY OF BREMEN   (Germany)

^b UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); GERMANIUM; SURFACE ACTIVE AGENTS; THERMAL EFFECTS; THIN FILMS;

LATTIC RELAXATION; MISFIT DISLOCATION; SURFACTANT MEDIATED EPITAXY;

SILICON;

EID: 33144455826     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.96.066101     Document Type: Article

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