In situ hydrogen plasma treatment for improved transport of (4 0 0) oriented polycrystalline silicon films

Solar Energy Materials and Solar Cells

Volumn 66, Issue 1-4, 2001, Pages 313-320

  Suemasu, A ^a   Nakahata, K ^a   Ro, K ^a   Kamiya, T ^a   Fortmann, C M ^a   Shimizu, I ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; FILM GROWTH; FILM PREPARATION; GRAIN BOUNDARIES; PHOTOCONDUCTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SUBSTRATES;

DEFECT DENSITY; HYDROGEN PLASMA TREATMENT; POLYCRYSTALLINE SILICON;

POLYCRYSTALLINE MATERIALS;

EID: 0035254453     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(00)00189-6     Document Type: Article

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