Dependence of the performance of single photon avalanche diodes on the multiplication region width

IEEE Journal of Quantum Electronics

Volumn 44, Issue 12, 2008, Pages 1188-1195

  Ramirez, David A ^a   Hayat, Majeed M ^a   Itzler, Mark A ^b  

^a University of New Mexico   (United States)

^b PRINCETON LIGHTWAVE INC   (United States)

Author keywords

Avalanche photodiodes (APDs); Breakdown probability; Dark count rate; Dead space; Detection efficiency; Geiger mode; Heterostructure APDs; Impact ionization; Single photon detection

Indexed keywords

BREAKDOWN PROBABILITY; DARK COUNT RATE; DEAD SPACE; GEIGER MODE; GEIGER MODES; HETEROSTRUCTURES; SINGLE PHOTON DETECTION;

AVALANCHE PHOTODIODES; DETECTORS; HETEROJUNCTIONS; IMPACT IONIZATION; MULTIPHOTON PROCESSES; PARTICLE BEAMS; PARTICLE DETECTORS; PHOTODETECTORS; PHOTODIODES; PHOTOIONIZATION; PHOTONS; PROBABILITY; TUNNELING (EXCAVATION); WIND TUNNELS;

AVALANCHE DIODES;

EID: 70450142872     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2008.2003140     Document Type: Article

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