Electrical properties of phase change and channel current control in ultrathin phase-change channel transistor memory by annealing

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 3238-3242

  Yin, You ^a   Miyachi, Akihira ^a   Niida, Daisuke ^a   Sons, Hayato ^a   Hosaka, Sumio ^a  

^a GUNMA UNIVERSITY   (Japan)

Author keywords

Annealing; Chalcogenide; Channel current control; Phase change; Transistor memory

Indexed keywords

ANNEALING; ELECTRIC CURRENTS; PHASE CHANGING CIRCUITS; TRANSISTORS; ULTRATHIN FILMS;

CHALCOGENIDE; CHANNEL CURRENT CONTROL; PHASE CHANGE; TRANSISTOR MEMORY;

RANDOM ACCESS STORAGE;

EID: 33646934084     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.3238     Document Type: Article

References (6)

1. S. R. Ovshinsky: Phys. Rev. Lett. 21 (1968) 1450.
2. S. Lai and T. Lowrey: IEDM Tech. Dig., 2001, p. 803.
3. S. Hosaka, K. Miyauchi, T. Tamura, H. Sone and H. Koyanagi: Microelectron. Eng. 73-74 (2004) 736.
4. Y. Yin, H. Sone and S. Hosaka: Jpn. J. Appl. Phys. 44 (2005) 6208.
5. K. Yano, T. Ishii, T. Hashimoto, T. Kobayashi, F. Murai and K. Seki: IEEE Trans. Electron Devices 41 (1994) 1628.
6. R. C. Frye and D. Adler: Phys. Rev. B 24 (1981) 5812.