Nitrogen and silicon co-doping of Ge2Sb2Te 5 thin films for improving phase change memory performance

Chinese Physics Letters

Volumn 24, Issue 3, 2007, Pages 781-783

  Cai, Yan Fei ^a   Zhou, Peng ^a   Lin, Yin Yin ^a   Tang, Ting Ao ^a   Chen, Liang Yao ^a   Li, Jing ^a   Qiao, Bao Wei ^b   Lai, Yun Feng ^b   Feng, Jie ^b   Cai, Bing Chu ^b   Chen, Bomy ^c  

^a FUDAN UNIVERSITY   (China)

^b SHANGHAI JIAO TONG UNIVERSITY   (China)

^c SILICON STORAGE TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY COMPOUNDS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GERMANIUM COMPOUNDS; NITROGEN; PHASE CHANGE MEMORY; SEMICONDUCTOR DOPING; SILICON; SILICON COMPOUNDS; TELLURIUM COMPOUNDS; THIN FILMS; X RAY DIFFRACTION;

CO-DOPED; CO-DOPING; ELECTRICAL PHASIS; MEMORY PERFORMANCE; N-DOPED; PHASE-CHANGE MEMORY; SI DOPANT; SI-N BONDS; SPECTRA'S; THIN-FILMS;

CRYSTALLINE MATERIALS;

EID: 34247234554     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/24/3/053     Document Type: Article

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