Study on the crystallization by an electrical resistance measurement in Ge2 Sb2 Te5 and N-doped Ge2 Sb2 Te5 films

Journal of Applied Physics

Volumn 102, Issue 11, 2007, Pages

  Hu, D Z ^a   Lu, X M ^a   Zhu, J S ^a   Yan, F ^b  

^a NANJING UNIVERSITY   (China)

^b HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CRYSTALLIZATION; ELECTRIC RESISTANCE MEASUREMENT;

AVRAMI COEFFICIENT;

AMORPHOUS FILMS;

EID: 37149031866     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2818104     Document Type: Article

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