Linear broadband GaN MMICs for Ku-band applications

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2006, Pages 1324-1326

  Schuh, P ^a   Leberer, R ^a   Sledzik, H ^a   Schmidt, D ^a   Oppermann, M ^a   Adelseck, B ^a   Brugger, H ^a   Quay, R ^b   Van Raay, F ^b   Seelmann Eggebert, M ^b   Kiefer, R ^b   Brenner, W ^b  

^a AIRBUS GROUP INNOVATIONS   (Germany)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

AlGaN GaN; Broadband amplifier; HEMTs; Linearity; MMICs

Indexed keywords

ALUMINUM; BROADBAND AMPLIFIERS; HIGH ELECTRON MOBILITY TRANSISTORS; MICROSTRIP DEVICES; SILICON WAFERS; THERMAL CONDUCTIVITY;

HEATSPREADERS; LINEAR BROADBAND AMPLIFIER MMIC; MICROSTRIP TECHNOLOGY; SIGNAL GAIN;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 34250303533     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2006.249475     Document Type: Conference Paper

References (4)

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2. Y.-F. Wu, M. Moore, A. Saxler, P. Smith, P. M. Chavarkar, and P. Parikh, "3.5-watt AlGaN/GaN HEMTs and amplifiers at 35 GHz," in International Electron Device Meeting Technical Digest, 2003, pp. 23.5.1-23.5.3.
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4. F. van Raay, R. Quay, R. Kiefer, M. Schlechtweg, and G. Weimann, "Large signal modeling of AlGaN/GaN HEMTs with Psat > 4 W/mm at 30 GHz suitable for broadband power applications," in IEEE Microwave Theory and Techniques Symposium Digest, 2003, pp. 451-454.