Evaluation of surface states of AlGaN/GaN HFET using open-gated structure

IEICE Transactions on Electronics

Volumn E88-C, Issue 4, 2005, Pages 683-689

  Kikuta, Daigo ^a,b   Ao, Jin Ping ^a,b,c,d   Ohno, Yasuo ^a,b,c,d  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

^b JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

^c Department of Electrical and Electronic Engineering ^*

^d IEEE

Author keywords

AlGaN GaN heterostructure; Device simulation; Interface state; Open gated FET; Surface state; Trap

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRAPS; FERMI LEVEL; GALLIUM NITRIDE; PASSIVATION; THIN FILMS;

ALGAN/GAN HETEROSTRUCTURE; DEVICE SIMULATION; INTERFACE STATE; OPEN-GATED FET; SURFACE STATE; TRAP;

FIELD EFFECT TRANSISTORS;

EID: 33645571824     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1093/ietele/e88-c.4.683     Document Type: Article

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