A mechanism of enhancement-mode operation of AlGaN/GaN MIS-HFET

IEICE Transactions on Electronics

Volumn E89-C, Issue 7, 2006, Pages 1031-1036

  Kikuta, Daigo ^a   Ao, Jin Ping ^a   Matsuda, Junya ^a   Ohno, Yasuo ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

AlGaN; Enhancement; GaN; HFET; Insulator; MIS

Indexed keywords

COMPUTER SIMULATION; ELECTRODES; GALLIUM NITRIDE; GATES (TRANSISTOR); HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR MATERIALS; THRESHOLD VOLTAGE;

ALGAN; ENHANCEMENT; HFET; INSULATORS;

FIELD EFFECT TRANSISTORS;

EID: 33747874579     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1093/ietele/e89-c.7.1031     Document Type: Conference Paper

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