Evidence of a new degradation mechanism in high-k dielectrics at elevated temperatures

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2009, Pages 493-498

  Sahhaf, S ^a,b   Degraeve, R ^a   O'Connor, R ^c   Kaczer, B ^a   Zahid, M B ^a   Roussel, Ph J ^a   Pantisano, L ^a   Groeseneken, G ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c DUBLIN CITY UNIVERSITY   (Ireland)

Author keywords

Energetically deep and shallow traps; Temperature

Indexed keywords

CARRIER INJECTION; DEGRADATION MECHANISM; DRIVING FORCES; ELEVATED TEMPERATURE; ENERGETICALLY DEEP AND SHALLOW TRAPS; ENERGY SPECTRA; GENERATION RATE; HIGH-K DIELECTRIC; HOLE FLUENCE; MOS-FET; N-CHANNEL; STRESS-INDUCED LEAKAGE CURRENT; TRAP SPECTROSCOPY; TWO-MATERIALS;

GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM; LEAKAGE CURRENTS; SPECTROSCOPY;

DEGRADATION;

EID: 70449108089     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2009.5173302     Document Type: Conference Paper

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