Theoretical study of the charge control in AlGaN/GaN HEMTs

National Radio Science Conference, NRSC, Proceedings

Volumn , Issue , 2006, Pages

  Abdel Aziz, M ^a   El Abd, Ali ^b  

^a Alexandria Higher Institute of Technology

^b Egyptian Telecommunication Company

Author keywords

[No Author keywords available]

Indexed keywords

(MO Y) DOPING; ALGAN GAN; ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTOR (HEMT); BARRIER-LAYER THICKNESS; CHARGE CONTROL; DIFFERENT EFFECTS; INDUCED POLARIZATION (IP); MODEL RESULTS; MOLE FRACTIONS; NON-LINEAR; NUMERICAL MODELLING; PIEZOELECTRIC POLARIZATIONS; POISSON; PROCESSING PARAMETERS; RADIO SCIENCE; SPACER LAYER THICKNESSES;

ALUMINUM; ELECTRON MOBILITY; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; NUMERICAL METHODS; POISSON EQUATION; POLARIZATION;

PHOTOACOUSTIC EFFECT;

EID: 46649097404     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NRSC.2006.386378     Document Type: Conference Paper

References (14)

1. M. Hiroki, N. Maeda, and N. Kobayashi, "Metal organic vapor phase epitaxy growth of AlGaN/GaN heterstructures on sapphire substrates," J. of Crystal Growth 237-239, (2002).
2. Bhapkar U., and M. Shur, "Velocity-field characteristics of 2-D and 3-D Electron Gases in GaN," J. Appl. Phys., Aug. 1 (1997)
3. F. Bernardini, V. Fiorentini, and D. Vanderbilt, "Spontaneous polarization and piezoelectric constants of III - V nitrides," Phys. Rev B., vol. 56, (1997)
4. 1-x N/GaN MODFETs" IEEE Trans. Elect. Devices, vol. 52, Aug. 9 (2005).
5. Frank S., S Nour, and H. Morkoc, "Theoretical investigation of electrical characteristics of AlGaN/GaN modulation doped field-effect transistors," J. Appl. Phys., Sept. 1 (1996)
6. E. T. Yu, P. Asbeck, C. D. Wang, D. Qiao, and S. S. Lau, "Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors," Appl. Phys. Lett., Nov. 10 (1997)
7. E. T. Yu, P. Asbeck, X. Z. Dang, S. S. Lau, G. J. Sullivan, "Spontanous and piezoelectric polarization effects in III-V nitride heterostructures," J. Vac. Sci Technol. B17 (4), Jul/Aug. (1999)
8. O. Ambacher e. al, "Two-dimensional electron gases induced by spontanous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures," J. Appl. Phys., Nov. 6 (1999)
9. F. Sacconi, A. Carlo, P. Lugli, and H. Morckoc, "Spontaneous and piezoelectric polarization effects on the output characteristics of AlGaN/GaN heterostructure modulation doped FETs," IEEE Trans. Elect. Devices, vol. 48, March 3 (2001).
10. Tsung H. Yu., and Keven F. Brennan, "Theoretical study of a GaN-AlGaN high electron mobility transister including a non-linear polarization model," IEEE Trans. Elect. Devices, vol. 50, Feb. 2 (2003).
11. A.D. Bykhovski, B.L. Gelmont, and M. Shur," Elastic strain relaxation and pizoeffect in GaN-AIN, GaN-AlGaN, and GaN-InGaN superlatices," J. Appl. Phys., May. 1 (1997)
12. O. Ambacher et al., "Pyroelectric properties of Al(In)GaN/GaN hetero and quantum well structures," J. Phys.: Condens. Matter, vol. 14, (2002).
13. E. Kreyzig, "Advanced Engineering Mathematics," John Wiley& Sons Inc., (1993)
14. th NRSC Cairo Egypt (1996).