Deep level defects in Mg-doped, p-type GaN grown by metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 68, Issue 24, 1996, Pages 3470-3472

  Gotz W ^a   Johnson, N M ^a   Bour, D P ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009742651     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116075     Document Type: Article

References (9)

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