A charge-control HEMT model incorporating deep level effects

Solid-State Electronics

Volumn 43, Issue 3, 1999, Pages 473-480

  Singh, Ranjit ^a,b   Snowden, Christopher M ^a  

^a UNIVERSITY OF LEEDS   (United Kingdom)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRAPS; SEMICONDUCTOR DEVICE MODELS; SUBSTRATES; VOLTAGE CONTROL;

DEEP LEVEL EFFECTS; SELF-CONSISTENT CHARGE-CONTROL MODELS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033099232     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00316-5     Document Type: Article

References (30)

1. Chadi DJ, Chang KJ. Phys Rev Lett 1988;61:873-6.
2. Chadi DJ, Chang KJ. Phys Rev B 1989;39:10063-100074.
3. Mooney PM, Caswell NS, Wright SL. J Appl Phys 1987;62:4786-97.
4. Morgan TN. Phys Rev B 1986;34:2664-9.
5. Martin GM, Mitonneau A, Mircea A. Electr Lett 1977;13:191-3.
6. Mitonneau A, Martin GM, Mircea A. Electr Lett 1977;13:666-8.
7. Barton TM, Snowden CM. IEEE Trans Electr Devices 1990;37:1409-15.
8. Chadi DJ, Chang KJ. Phys Rev Lett 1988;60:2187-90.
9. Mizuta H, Yamaguchi K, Yamane M, Tanoue T, Takahashi S. IEEE Trans Electr Devices 1989;36:2307-13.
10. Shawki T, Salmer G, El-Sayed O. IEEE Trans Electr Devices 1990;37:21-9.
11. Tachikawa M, Fujisawa T, Kukimoto H, Shibata A, Oomi G, Minomura S. Jpn J Appl Phys 1985;24:893.
12. Krantz RJ, Mayer DC, Bloss WL. Solid-St Electr 1990;33:1189-95.
13. Singh R, Snowden CM. Proceedings GaAs simulation group VII meeting, 1993, Harrogate, UK.
14. Singh R, Snowden CM. Proceedings of the international workshop on computational electronics, 1993, Leeds, UK. p. 60-64.
15. Vinter B. Appl Phys Lett 1984;44:307-9.
16. Yoshida J. IEEE Trans Electr Devices 1986;33:154-6.
17. Stern F, Sarma SD. Phys Rev B 1984;30:840-8.
18. Drury R. Ph.D. thesis, 1993, University of Leeds.
19. Shockley W, Read WT. Phys Rev 1952;87:835-42.
20. Hall RN. Phys Rev 1952;87:387.
21. Singh R, Snowden CM. IEEE Trans Microwave Theory Tech 1996;44:114-21.
22. Adachi S. J Appl Phys 1985;58:1-29.
23. Guigni S, Tansley TL. Semiconductor Sci Technol 1992;7:1113-6.
24. Adachi S. J Appl Phys 1982;53:8775-92.
25. Kuo CP, Vong SK, Cohen RM, Stringfellow GB. J Appl Phys 1985;57:5428-32.
26. Marzin JY, Charasse MN, Sermage B. Phys Rev B 1985;31:8298-301.
27. Park DH, Bernnan KF. J Appl Phys 1989;65:1615.
28. Alamkan J, Happy H, Cordier Y, Cappy A. Eur Trans Telecommunications Relat Technol 1990;1:59-62.
29. Arent DJ, Deneffe K, Hoof CV, Boeck JD, Borghs G. J Appl Phys 1989;15:1739-47.
30. Niki S, Lin CL, Chang WSC, Wieder HH. Appl Phys Lett 1989;55:1339-41.