Detection of carbon-related bandgap states in GaN using deep level optical spectroscopy

IEEE International Symposium on Compound Semiconductors, Proceedings

Volumn 2003-January, Issue , 2003, Pages 4-5

  Ringel, S A ^a   Armstrong, A ^a   Arehart, A ^a   Moran, B ^b   Mishra, U K ^b   Speck, J S ^b  

^a The Ohio State University   (United States)

^b University of California   (United States)

Author keywords

Doping; Gallium nitride; HEMTs; MOCVD; Molecular beam epitaxial growth; Optical films; Optical materials; Organic materials; Photonic band gap; Spectroscopy

Indexed keywords

ATMOSPHERIC PRESSURE; DOPING (ADDITIVES); ENERGY GAP; EPITAXIAL GROWTH; FILMS; HIGH ELECTRON MOBILITY TRANSISTORS; MASS SPECTROMETRY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAMS; NITRIDES; OPTICAL FILMS; OPTICAL MATERIALS; PHOTONIC BAND GAP; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SPECTROSCOPY;

CARBON CONCENTRATIONS; CARBON INCORPORATION; DEEP LEVEL OPTICAL SPECTROSCOPY; MOLECULAR BEAM EPITAXIAL GROWTH; NITRIDE LAYERS; ORGANIC MATERIALS; SECONDARY ION MASS SPECTROSCOPIES (SIMS); SEMI-INSULATING;

GALLIUM NITRIDE;

EID: 84943530760     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCS.2003.1239877     Document Type: Conference Paper

References (4)

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