The doping of GaN with Mg diffusion

Solid-State Electronics

Volumn 43, Issue 3, 1999, Pages 621-623

  Pan, C J ^a   Chi, G C ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CARRIER MOBILITY; DIFFUSION IN SOLIDS; ELECTRIC CONDUCTIVITY OF SOLIDS; MAGNESIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

BROAD VIOLET EMISSIONS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033097677     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00289-5     Document Type: Article

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