Gain characteristic of continuous-wave InGaN multiple quantum well laser diodes during life testing

Journal of Applied Physics

Volumn 88, Issue 7, 2000, Pages 3820-3823

  Goddard, Lynford L ^a   Kneissl, Michael ^a   Bour, David P ^a   Johnson, N M ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041929823     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1290258     Document Type: Article

References (14)

1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, Appl. Phys. Lett. 70, 868 (1997).
2. S. Nakamura et al., Jpn. J. Appl. Phys., Part 2 36, L1568 (1997).
3. S. Nakamura et al., Jpn. J. Appl. Phys., Part 2 37, L309 (1998).
4. See, for example, The Nikkei Industrial Daily, Tuesday ed., January 12, 1999.
5. T. Kobayashi, F. Nakamura, K. Naganuma, T. Tojyo, H. Nakajima, T. Asatsuma, H. Kawai, and M. Ikeda, Electron. Lett. 34, 1494 (1998).
6. A. Kuramata, S. Kubota, R. Soejima, K. Domen, K. Horino, and T. Tanahashi, Jpn. J. Appl. Phys., Part 2 37, L1373 (1998).
7. M. Kuramato et al., Jpn. J. Appl. Phys., Part 2 38, L184 (1999).
8. M. Kneissl, D. P. Bour, C. G. Van de Walle, L. T. Romano, J. E. Northrup, R. M. Wood, M. Teepe, and N. M. Johnson, Appl. Phys. Lett. 75, 581 (1999).
9. The term true spontaneous emission (TSE) emphasizes the fact that only spontaneously emitted light that escapes the laser diode active region without being amplified or reabsorbed is taken into account.
10. B. Hakki and T. Paoli, J. Appl. Phys. 46, 1299 (1975).
11. C. H. Henry, R. A. Logan, and F. R. Merritt, J. Appl. Phys. 51, 3042 (1980).
12. P. Blood, A. I. Kucharska, J. P. Jacobs, and K. Griffiths, J. Appl. Phys. 70, 1144 (1991).
13. Y. K. Song et al., Appl. Phys. Lett. 72, 1418 (1998).
14. S. Nakamura et al., Jpn. J. Appl. Phys., Part 2 37, L627 (1998).