Increase of nonradiative recombination centers in GaN-based laser diodes during aging

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn , Issue , 2008, Pages 264-265

  Orita, Kenji ^a   Ohno, Hiroshi ^a   Ikedo, Norio ^a   Takigawa, Shinichi ^a   Yuri, Masaki ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LIFETIME; DEGRADATION; GALLIUM NITRIDE; LADDER NETWORKS; LASERS; LIGHT; OPTICS; SEMICONDUCTING GALLIUM;

BLUE LASER DIODES; DENSITY OF DEFECTS; LASER DIODES; LIGHT OUTPUTS; MQW ACTIVE LAYERS; NONRADIATIVE RECOMBINATION CENTERS; NONRADIATIVE RECOMBINATIONS; THRESHOLD CURRENTS;

GALLIUM ALLOYS;

EID: 58049156472     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/LEOS.2008.4688591     Document Type: Conference Paper

References (5)

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2. M. Meneghini, et al., "Extensive analysis of the degradation of Blu-Ray laser diodes," IEEE Electron Device Lett., vol. 29, pp.578-581, June 2008.
3. M. Fukuda, Reliability and Degradation of Semiconductor Lasers and LEDs, Norwood, MA; Artech House, 1991
4. C. van Odorp and G. W. 't Hooft, "Method for determining effective nonradiative lifetime and leakage losses in double-heterostructure lasers," J. Appl. Phys., vol. 52, pp. 3827-3839, Feb. 1981.
5. L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits, New York: Wiley, 1995